A novel generalized fractional-order memristor model with fully explicit memory description (2023)

Title              :  A novel generalized fractional-order memristor model with fully explicit memory description

Researcher       : Banchuin, R.
Department      :  Faculty of Engineering, Siam University, Bangkok, Thailand
Email                     :  rawid.ban@siam.edu

Abstract            : In this work, a novel generalized mathematical model of fractional-order memristor with fully explicit memory description has been proposed. For obtaining such full explicit memory description, the Atangana-Baleanu fractional derivative in Liouville-Caputo sense, which employs a nonsingular kernel, has been adopted as the mathematical basis. The proposed model has been derived without regarding to any specific conventional memristor. A comparison with the singular kernel fractional derivative-based model has been made. The behavioral analysis of the fractional-order memristor based on the proposed model has been performed, where both DC and AC stimuli have been considered. In addition, its application to the practical fractional-order memristor-based circuit and its extension to the fractional-order memreactance have also been shown. Unlike the singular kernel fractional derivative-based model, a fully explicit memory description can be obtained by ours. Many other interesting results that are contradict to the previous singular kernel fractional derivative-based ones, e.g., the fractional-order memristor that can be locally active, have been demonstrated. The abovementioned extension can be conveniently performed. In summary, this is the first time that a nonsingular kernel fractional derivative has been applied to the fractional-order memristor modeling and the resulting model with a fully explicit memory description has been proposed. The proposed model is also highly generic, applicable to the practical circuit, and extendable to the fractional-order memreactance.

Link to article  :  International Journal of Circuit Theory and Applications, 2023, 51(4), pp. 1935–1957. https://doi.org/10.1002/cta.3410

Journal            :  International Journal of Circuit Theory and Applications / in Scopus

Bibliography     :  Banchuin, R. (2023). A novel generalized fractional-order memristor model with fully explicit memory description. International Journal of Circuit Theory and Applications, 51(4), 1935–1957. https://doi.org/10.1002/cta.3410