Title              :  A novel generalized fractional-order memristor model with fully explicit memory description

Researcher       : Banchuin, R.
Department      :  Faculty of Engineering, Siam University, Bangkok, Thailand
Email                     :  rawid.ban@siam.edu

Abstract            : In this work, a novel generalized mathematical model of fractional-order memristor with fully explicit memory description has been proposed. For obtaining such full explicit memory description, the Atangana-Baleanu fractional derivative in Liouville-Caputo sense, which employs a nonsingular kernel, has been adopted as the mathematical basis. The proposed model has been derived without regarding to any specific conventional memristor. A comparison with the singular kernel fractional derivative-based model has been made. The behavioral analysis of the fractional-order memristor based on the proposed model has been performed, where both DC and AC stimuli have been considered. In addition, its application to the practical fractional-order memristor-based circuit and its extension to the fractional-order memreactance have also been shown. Unlike the singular kernel fractional derivative-based model, a fully explicit memory description can be obtained by ours. Many other interesting results that are contradict to the previous singular kernel fractional derivative-based ones, e.g., the fractional-order memristor that can be locally active, have been demonstrated. The abovementioned extension can be conveniently performed. In summary, this is the first time that a nonsingular kernel fractional derivative has been applied to the fractional-order memristor modeling and the resulting model with a fully explicit memory description has been proposed. The proposed model is also highly generic, applicable to the practical circuit, and extendable to the fractional-order memreactance.

Link to article  :  International Journal of Circuit Theory and Applications, 2023, 51(4), pp. 1935–1957. https://doi.org/10.1002/cta.3410

Journal            :  International Journal of Circuit Theory and Applications / in Scopus

Bibliography     :  Banchuin, R. (2023). A novel generalized fractional-order memristor model with fully explicit memory description. International Journal of Circuit Theory and Applications, 51(4), 1935–1957. https://doi.org/10.1002/cta.3410

Title              :   Analytical model of inverse memelement with fractional order kinetic

Researcher       : Banchuin, R.
Department      : Faculty of Engineering & Graduated School of IT, Siam University, Bangkok, Thailand
Email                     :  rawid.ban@siam.edu

Abstract            :  In this work, the analytical model of inverse memelement with fractional order kinetic has been proposed. The classical yet noncontroversial Caputo fractional derivative has been adopted for modeling such fractional order kinetic due to its simplicity yet accuracy. Based on the proposed model, the analysis of fractional order kinetic inverse memristor has been thoroughly performed where both nonperiodic and periodic excitations have been considered. Analytical formulations of the related parameters, for example, the rate of changes of inverse memristance, area of inverse memristance loop, and area of pinched hysteresis loop, and so on, have been performed. The extension of the proposed model to the fractional inverse memelement has been performed where the fractional inverse memristor has been analyzed. We have found that the inverse memristor still behaves in an opposite manner to the memristor even with the fractional order kinetic. All obtained results have been found to be intuitively applicable to any inverse memelement. The equivalent circuit models of both fractional inverse memristor and fractional inverse memelement have also been presented. This work provides a comprehensive understanding on both inverse memelement with fractional order kinetic and fractional inverse memelement. The realization of the emulator of such inverse memelement with fractional order kinetic and the fractional inverse memelement emulator has been found to be interesting opened research questions.

Link to article  :  International Journal of Circuit Theory and Applications, 2022, 50(7), pp. 2342–2377. https://doi.org/10.1002/cta.3264

Journal            :  International Journal of Circuit Theory and Applications / in Scopus

Bibliography     : Banchuin, R. (2022). Analytical model of inverse memelement with fractional order kinetic. International Journal of Circuit Theory and applications, 50(7), 2342-2377. https://doi.org/10.1002/cta.3264

ฐานข้อมูลงานวิจัย มหาวิทยาลัยสยาม : https://e-research.siam.edu/kb/analytical-model-of-inverse/

Title              :  Generic analytical models of memelement and inverse memelement with time-dependent memory effects

Researcher       : Banchuin, R.
Department      :  Faculty of Engineering, & Graduated School of IT, Siam University, Bangkok, Thailand
Email                     :  rawid.ban@siam.edu

Abstract            : 

Link to article  :  COMPEL – The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 2023, 42(6), pp. 1669–1689. https://doi.org/10.1108/COMPEL-03-2023-0085

Journal            :  COMPEL – The International Journal for Computation and Mathematics in Electrical and Electronic Engineering / in Scopus

Citation   :  Banchuin, R. (2023). Generic analytical models of memelement and inverse memelement with time-dependent memory effects. COMPEL – The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 42(6), 1669–1689. https://doi.org/10.1108/COMPEL-03-2023-0085

Title              :  Noise analysis of electrical circuits on fractal set

Researcher       : Banchuin, R.
Department      :  Faculty of Engineering, & Graduated School of IT, Siam University, Bangkok, Thailand
Email                     :  rawid.ban@siam.edu

Abstract            : 

Link to article  :  COMPEL – The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 2022, 41(5), pp. 1464–1490. https://doi.org/10.1108/COMPEL-08-2021-0269

Journal            :  COMPEL – The International Journal for Computation and Mathematics in Electrical and Electronic Engineering / in Scopus

Citation   :  Banchuin, R. (2022). Noise analysis of electrical circuits on fractal set. COMPEL – The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 41(5), 1464–1490. https://doi.org/10.1108/COMPEL-08-2021-0269

ฐานข้อมูลงานวิจัย มหาวิทยาลัยสยาม : https://e-research.siam.edu/kb/noise-analysis-of-electrical-circuits/

Title              :  On The Fractional Domain Analysis of HP TiO2 Memristor Based Circuits with Fractional Conformable Derivative

Researcher       : Banchuin, R.
Department      :  Faculty of Engineering, & Graduated School of IT, Siam University, Bangkok, Thailand
Email                     :  rawid.ban@siam.edu

Abstract            :  For the first time, the physical memristor-based circuits i.e., HP TiO₂ memristor-based circuits, of both series and parallel structures, have been extensively analyzed in the fractional domain by means of the state of the art yet simple fractional conformable derivative-based differential equations. Different outcome from the hypotheticalmemory element-based previous researches have been obtained. The dimensional consistencies of the fractional derivatives have also been concerned. The often-cited Joglekar’s window function has been adopted for modelling the boundary effect of the memristor and adding more nonlinearity close to the bounds of the memristor’s state variable. The formulated fractional differential equations have been solved and the related electrical quantities have been determined. The computational simulations have been performed. The stability analyses of both circuits have also been presented where it has been mathematically verified that only these HP TiO₂ memristor-based circuits are stable always due to the boundary effect which does not exist in hypothetical elements assumed in those previous works. We also point out that that only those HP TiO₂ memristor-based circuits of order higher than 3 are capable to exhibit the complex dynamics as such memristor lacks the local activity.

Link to article  : Cogent Engineering, 2021, 8(1), 1986198. https://doi.org/10.1080/23311916.2021.1986198

Journal            :  Cogent Engineering  / in Scopus

Citation  :  Banchuin, R. (2021). On the fractional domain analysis of HP TiO2 memristor based circuits with fractional conformable derivative. Cogent Engineering, 8(1), 1986198. https://doi.org/10.1080/23311916.2021.1986198

ฐานข้อมูลงานวิจัย มหาวิทยาลัยสยาม : https://e-research.siam.edu/kb/on-the-fractional-domain/